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Applied Physics LettersVolume 88, Issue 14, 3 April 2006, Article number 143109

Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode(Article)

  • aRIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
  • bSII NanoTechnology Inc., 36-1, Takenoshita, Oyama-cho, Sunto-gun, Shizuoka 410-1393, Japan
  • cDepartment of Applied Physics, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Abstract

We observe localized strains in strained silicon by tip-enhanced near-field Raman spectroscope in reflection mode. The tip-enhanced Raman spectra show that the Raman frequency and intensity of strained silicon were different within a crosshatch pattern induced by lattice mismatch. Micro-Raman measurements, however, show only uniform features because of averaging effect due to the diffraction limit of light. Nanoscale characterization of strained silicon is essential for developing reliable next generation integrated circuits. This technique can be applicable not only to strained silicon but also to any other crystals. © 2006 American Institute of Physics.

Indexed keywords

Engineering controlled terms:Crystal latticesDiffractionIntegrated circuitsRaman spectroscopyReflectionSpectrum analysis
Engineering uncontrolled terms:Crosshatch patternsMicro Raman measurementsReflection modeStrained silicon
Engineering main heading:Semiconducting silicon
  • ISSN: 00036951
  • CODEN: APPLA
  • Source Type: Journal
  • Original language: English
  • DOI: 10.1063/1.2191949
  • Document Type: Article

  Hayazawa, N.; RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Japan;
© Copyright 2008 Elsevier B.V., All rights reserved.

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