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Journal of Raman SpectroscopyVolume 38, Issue 6, June 2007, Pages 789-796

High contrast scanning nano-Raman spectroscopy of silicon(Article)

  • aDepartment of Polymer Science, University of Akron, Akron, OH 44325-3909, United States
  • bMaterials and Manufacturing Directorate/MLBP, Wright-Patterson AFB, Dayton, OH 45433-7750, United States
  • cMaterials Science and Engineering Laboratory, National Institute of Standard and Technology (NIST), Gaithersburg, MD 20899-8520, United States

Abstract

We have demonstrated that scanning nano-Raman spectroscopy (SNRS), generally known as tip-enhanced Raman spectroscopy (TERS), with side illumination optics can be effectively used for analysis of silicon-based structures at the nanoscale. Even though the side illumination optics has disadvantages such as difficulties in optical alignment and shadowing by the tip, it has the critical advantage that it may be used for the analysis of nontransparent samples. A key criterion for making SNRS effective for imaging Si samples is the optimization of the contrast between near-field and far-field (background) Raman signals. This has been achieved by optimizing the beam polarization, resulting in an order of magnitude improvement in the contrast. We estimate the lateral resolution of our Raman images to be ∼ 20 nm. Copyright © 2007 John Wiley & Sons, Ltd.

Author keywords

Apertureless near-field spectroscopyDepolarizationScanning nano-Raman spectroscopy (SNRS)SiliconTip-enhanced Raman spectroscopy (TERS)
  • ISSN: 03770486
  • CODEN: JRSPA
  • Source Type: Journal
  • Original language: English
  • DOI: 10.1002/jrs.1698
  • Document Type: Article

  Sokolov, A.P.; Department of Polymer Science, University of Akron, United States;
© Copyright 2007 Elsevier B.V., All rights reserved.

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