Spin transistor in the EuO:Fe/GaAs contact(Article)
- aInstitute of Solid State Chemistry, Russian Academy of Sciences, Ural Branch, Yekaterinburg 620219, Russian Federation
- bRussian State Vocational Pedagogic University, Yekaterinburg, Russian Federation
Abstract
Spin-wave structures with magnetic-field-driven current-voltage characteristics at room temperature were produced using a spintronic europium-monoxide-based thin-film emitter and a single-crystal n-GaAs semiconductor collector. This manifests practical implementation of the spin current transport and creation of a high-temperature spin transistor with the magnetic semiconductor/nonmagnetic semiconductor contact. © 2011 Pleiades Publishing, Ltd.
Indexed keywords
| Engineering uncontrolled terms | High temperaturePractical implementationRoom temperatureSemiconductor collectorsSemiconductor contactsSpin currentsSpin transistorSpintronics |
|---|---|
| Engineering controlled terms: | EuropiumTransistors |
| Engineering main heading: | Current voltage characteristics |
Funding details
| Funding sponsor | Funding number | Acronym |
|---|---|---|
| National Academy of Sciences of Belarus |
-
1
We thank researchers of the Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus, Minsk, A.I. Stognii, K.I. Yanushkevich, and A.I. Galyas for technological implementation of the project.
- ISSN: 10283358
- CODEN: DOPHF
- Source Type: Journal
- Original language: English
- DOI: 10.1134/S1028335811030062
- Document Type: Article
Bamburov, V. G.; Institute of Solid State Chemistry, Russian Academy of Sciences, Ural Branch, Russian Federation
© Copyright 2011 Elsevier B.V., All rights reserved.
Cited by 1 document
(2014) Russian Journal of Inorganic Chemistry