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JETP LettersVolume 96, Issue 4, October 2012, Pages 236-239

Relaxation and resonance ultrasound attenuation by Jahn-Teller centers in a GaAs:Cu crystal(Article)

  • Averkiev, N.S.,
  • Baryshnikov, K.A.,
  • Bersuker, I.B.,
  • Gudkov, V.V.,
  • Zhevstovskikh, I.V.,
  • Mayakin, V.Y.,
  • Monakhov, A.M.,
  • Sarychev, M.N.,
  • Sedov, V.E.
  • View Correspondence (jump link)
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  • aIoffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russian Federation
  • bInstitute for Theoretical Chemistry, The University of Texas at Austin, Austin, TX 78712, United States
  • cPhysical Technological Institute, Ural Federal University, Yekaterinburg 620002, Russian Federation
  • dRussian State Vocational Pedagogical University, Yekaterinburg 620012, Russian Federation
  • eInstitute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg 620219, Russian Federation

Abstract

The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. The temperature dependences of the attenuation of all normal ultrasonic modes propagating in the 〈110〉 direction both in doped copper and in nominally pure gallium arsenide crystals have been measured. In the GaAs:Cu crystal, the attenuation peak has been revealed for a transverse wave polarized along the 〈110〉 axis whose elastic shifts correspond to the symmetry of the tetragonal mode of the Jahn-Teller effect. The temperature dependence of the attenuation of this wave indicates that two types of attenuation-relaxation and resonance-occur. The constructed temperature dependence of the relaxation time indicates that tunneling through the potential barrier between the minima of the adiabatic potential energy is the main relaxation mechanism at temperatures below 10 K. Tunneling splitting estimated from experimental data is in good agreement with the theoretical estimate. © 2012 Pleiades Publishing, Ltd.

Funding details

Funding sponsor Funding number Acronym
NSh 5442.2012.2
Russian Foundation for Basic Research12 02 00467 aРФФИ
Russian Academy of Sciences12 T 02 1016РАН
Ministry of Education and Science of the Russian Federation14.740.11.0892Minobrnauka

  • 1

    This work was supported in part by the Ministry of Education and Science of the Russian Federation (state contract no. 14.740.11.0892 and contract no. 11.G34.31.0001 with the St. Petersburg State Polytechnic University and G.G. Pavlov as a leading scientist), the Russian Foundation for Basic Research (project no. 12 02 00467 a), the Council of the Pres ident of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. NSh 5442.2012.2), and the Russian Academy of Sciences (program no. 12 T 02 1016).

  • ISSN: 00213640
  • Source Type: Journal
  • Original language: English
  • DOI: 10.1134/S0021364012160023
  • Document Type: Article

  Gudkov, V. V.; Physical Technological Institute, Ural Federal University, Russian Federation;
© Copyright 2012 Elsevier B.V., All rights reserved.

Cited by 3 documents

Averkiev, N.S. , Bersuker, I.B. , Gudkov, V.V.
Acoustic properties of crystals with jahn-teller impurities: Elastic moduli and relaxation time. application to SrF2:Cr2+
(2017) Journal of the Physical Society of Japan
Gutkin, A.A. , Averkiev, N.S.
Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell
(2017) Semiconductors
Averkiev, N.S. , Bersuker, I.B. , Gudkov, V.V.
Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals
(2014) Journal of Applied Physics
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