Skip to main content
Low Temperature PhysicsVolume 39, Issue 4, 26 April 2013, Pages 384-388

Experimental observation of spontaneous spin polarization of electrons in hybridized states of transition element impurities in semiconductors(Article)(Open Access)

  • Okulov, V.I.,
  • Govorkova, T.E.,
  • Zhevstovskikh, I.V.,
  • Lonchakov, A.T.,
  • Okulova, K.A.,
  • Pamyatnykh, E.A.,
  • Podgornykh, S.M.,
  • Andriichuk, M.D.,
  • Paranchich, L.D.
  • View Correspondence (jump link)
  Save all to author list
  • aInstitute of Metals Physics, Urals Branch, Russian Academy of Sciences, Ul. S. Kovalevskoi 18, Ekaterinburg 620990, Russian Federation
  • bUrals Federal University, Pr. Lenina 51, Ekaterinburg 620083, Russian Federation
  • cChernovtsy National University, Chernovtsy, Ukraine

Abstract

Experimental evidence of the possible existence of spontaneous spin polarization of the electron system in hybridized states formed by transition element impurity atoms in the conduction band of semiconducting crystals is examined. The details of a quantitative interpretation of experiments on the temperature dependence of the specific heat and elastic moduli of mercury selenide crystals with iron impurities confirm the feasibility of establishing the presence of electron spin polarization in this type of experiment, as well as the possible existence of polarization in the crystals studied here. Theoretical arguments support the observation of a thermodynamic anomalous Hall effect owing to spontaneously polarized donor electrons from low-concentration impurities. © 2013 AIP Publishing LLC.

Indexed keywords

Engineering controlled terms:CrystalsElectronsElectrospinningMagnetic momentsMercury compoundsSpecific heatSpin polarizationTemperature distributionTransition metals
Engineering uncontrolled termsAnomalous hall effectsElectron spin polarizationImpurities in semi conductorsQuantitative interpretationSemiconducting crystalsSpontaneous spin polarizationTemperature dependenceTheoretical arguments
Engineering main heading:Crystal impurities

Funding details

Funding sponsor Funding number Acronym
Russian Foundation for Basic Research11-02-90410 Ukr_f_a,12-02-00530,12-T-2-1016РФФИ
  • 1

    This work was supported by the Russian Foundation for Basic Research (Grants Nos. 11-02-90410 Ukr_f_a and 12-02-00530) and Grant No. 12-T-2-1016 of the Division of Physical Sciences of the Russian Academy of Sciences.

  • ISSN: 1063777X
  • Source Type: Journal
  • Original language: English
  • DOI: 10.1063/1.4801435
  • Document Type: Article
  • Publisher: American Institute of Physics Inc.

  Okulov, V.I.; Institute of Metals Physics, Urals Branch, Russian Academy of Sciences, Ul. S. Kovalevskoi 18, Russian Federation;
© Copyright 2020 Elsevier B.V., All rights reserved.

Cited by 9 documents

Govorkova, T.E. , Okulov, V.I. , Pamyatnykh, E.A.
Intrinsic ferromagnetism in Hg1-xFexSe (0.00012 ≤ x ≤ 0.0013) diluted magnetic semiconductor bulk single crystals at room temperature: Role of hybridization of impurity electronic states
(2024) Results in Physics
Govorkova, T.E. , Okulov, V.I. , Pamyatnykh, E.A.
Room-Temperature Ferromagnetism in the Crystalline Semiconductor Compound Hg1 –xFe xSe (x ≤ 0.06 at %) with an Ultralow Iron Impurity Concentration
(2023) Bulletin of the Russian Academy of Sciences: Physics
Govorkova, T.E. , Okulov, V.I. , Okulova, K.A.
Low-temperature magnetic field dependences of spontaneous magnetization of low concentration (≤ 0.2 at.%) iron impurity electron system in mercury selenide crystal | Низкотемпературные магнитополевые зависимости спонтанной намагниченности электронной системы примесей железа низкой концентрации (≤ 0,2 ат.%) в кристалле селенида ртути
(2019) Fizika Nizkikh Temperatur
View details of all 9 citations
{"topic":{"name":"Selenides; Spin Polarization; Electron","id":41787,"uri":"Topic/41787","prominencePercentile":13.078471,"prominencePercentileString":"13.078","overallScholarlyOutput":0},"dig":"75f41ddd72ff125add271b5ed9a15c1294c95de7e68258c9a5ef5d4db5969d8d"}

SciVal Topic Prominence

Topic:
Prominence percentile: