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AIP Conference ProceedingsVolume 2174, 6 December 2019, Article number 0201336th International Young Researchers'' Conference on Physics, Technologies and Innovation, PTI 2019; Ekaterinburg; Russian Federation; 20 May 2019 through 23 May 2019; Code 155607

Modeling of electronic and optical properties of C3N4 within DFT frame(Conference Paper)(Open Access)

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  • aInstitute of Physics and Technology, Ural Federal University, Yekaterinburg, Russian Federation
  • bDepartment of Chemistry, Hanyang University, 222 Wangsimni-Ro, Seoul, 04763, South Korea

Abstract

The electronic and optical properties of bulk-, supercell- and nanocluster-C3N4 are studied by the first- principles calculations within the framework of the density functional theory (DFT). The results show that C3N4 is indirect band gap semiconductors, from total densities of states and partial densities of states of carbonitride, it was found that valence band occupied by N 2p states, conduction band occupied by C 2p states. The optical properties of C3N4 show that there are two absorption peaks for light absorption in the ultraviolet region, the light permeability spectrum displays the wide photoconductive response interval and a high peak of C3N4. These results demonstrate that the materials C3N4 with good optical conductivity is prospective in the field of photoelectric equipment. © 2019 Author(s).

Funding details

Funding sponsor Funding number Acronym
Ministry of Education and Science of the Russian Federation3.1485.2017/4.6Minobrnauka
Government Council on Grants, Russian Federation
  • 1

    The work was supported by the Ministry of Education and Science of the Russian Federation (Government Task No. 3.1485.2017/4.6) and Act 211 Government of the Russian Federation (contract № 02.A03.21.0006).

  • ISSN: 0094243X
  • ISBN: 978-073541921-6
  • Source Type: Conference Proceeding
  • Original language: English
  • DOI: 10.1063/1.5134284
  • Document Type: Conference Paper
  • Volume Editors: Volkovich V.A.,Zvonarev S.V.,Kashin I.V.,Smirnov A.A.,Narkhov E.D.
  • Publisher: American Institute of Physics Inc.

  Lei, X.; Institute of Physics and Technology, Ural Federal University, Yekaterinburg, Russian Federation;
© Copyright 2019 Elsevier B.V., All rights reserved.

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