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Materials Research ExpressVolume 7, Issue 2, 2020, Article number 025512

Latent tracks of swift Bi ions in Si3N4(Article)(Open Access)

  • Van Vuuren, A.J.,
  • Ibrayeva, A.,
  • Rymzhanov, R.A.,
  • Zhalmagambetova, A.,
  • O'Connell, J.H.,
  • Skuratov, V.A.,
  • Uglov, V.V.,
  • Zlotski, S.V.,
  • Volkov, A.E.,
  • Zdorovets, M.
  • View Correspondence (jump link)
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  • aChrtem, Nmu, University Way, Summerstrand, Port Elizabeth, South Africa
  • bL N Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan
  • cInstitute of Nuclear Physics, Almaty, Kazakhstan
  • dFlnr, Jinr, Joliot-Curie 6, Dubna, 141980, Russian Federation
  • eNational Research Nuclear University MEPhI, Moscow, Russian Federation
  • fDubna State University, Dubna, Russian Federation
  • gBelarusian State University, Minsk, Belarus
  • hSouth Ural State University, Chelyabinsk, Russian Federation
  • iNational Research Center 'Kurchatov Institute, Moscow, Russian Federation
  • jLebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russian Federation
  • kNational University of Science and Technology MISiS, Russian Federation
  • lUral Federal University, Yekaterinburg, Russian Federation

Abstract

Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si3N4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a 'core-shell' inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material. © 2020 The Author(s). Published by IOP Publishing Ltd.

Author keywords

Electron microscopyLatent tracksMolecular dynamics simulationSwift heavy ionsX-ray diffraction

Indexed keywords

Engineering controlled terms:Electron microscopesElectron microscopyHeavy ionsMolecular dynamicsSilicon compoundsX ray diffraction
Engineering uncontrolled termsComputer modellingIrradiated materialsLatent tracksMolecular dynamics simulationsPolycrystallineSwift heavy ionsTrack core sizeTrack diameter
Engineering main heading:Nitrogen compounds
  • ISSN: 20531591
  • Source Type: Journal
  • Original language: English
  • DOI: 10.1088/2053-1591/ab72d3
  • Document Type: Article
  • Publisher: Institute of Physics Publishing

  Van Vuuren, A.J.; Chrtem, Nmu, University Way, Summerstrand, Port Elizabeth, South Africa;
© Copyright 2020 Elsevier B.V., All rights reserved.

Cited by 11 documents

Ibrayeva, A. , O'Connell, J. , Skuratov, V.
The effect of aluminium concentration on the resistance of Si3N4 to ion track formation
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Patra, P. , Shah, S. , Kedia, S.K.
Study on structural properties of swift heavy ion induced damage in Al2O3
(2023) Radiation Physics and Chemistry
Bikhert, Y.V. , Kozlovskiy, A.L. , Popov, A.I.
Study of the Relationship between Changes in the Structural, Optical, and Strength Properties of AlN Ceramics Subjected to Irradiation with Heavy Xe23+ Ions
(2023) Materials
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