

Anisotropy in the thermal and electronic properties for two directions of a thermal wave propagation in GeSe2 single crystal was investigated using the photoacoustic frequency transmission technique. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the "c" axis (E1 ⊥ c), and then parallel to it (E1//c). It is shown that there is an obvious difference in the PA amplitude and phase spectra of the same sample, for cases when E1//c and E1 ⊥ c axis. The results for thermal diffusivity DT obtained by fitting procedure for these two orientations of the electric field with regard to the "c" axis, are calculated: DT// = 1.1 × 10-2 and DT⊥ = 1.7 × 10-3 cm2/s, e.g. their ratio is 6.6. The electronic transport parameters are also given: the carrier ambipolar diffusion coefficient D// = 1.5 cm2/s and D⊥ = 2.5 cm2/s.
| Engineering controlled terms: | DiffusionElectric field effectsElectron transport propertiesElectronic propertiesPhotoacoustic spectroscopyPhysical propertiesSemiconducting germanium compoundsSingle crystalsThermodynamic properties |
|---|---|
| Engineering uncontrolled terms: | Germanium selenideIncident polarized light beamPhotoacoustic frequency transmission techniqueThermal diffusivity |
| Engineering main heading: | Germanium alloys |
Nikolić, P.M.; Jt. Lab. for Adv. Materials of SASA, P.O. Box 745, Serbia
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