

Motivated by problems arising in semiconductor-device modeling, this paper is concerned with a singularly perturbed semilinear reaction-diffusion problem with a boundary turning point. It is proved that the problem has a unique solution with two boundary layers. Based on the estimates of the derivatives of the solution, a numerical method is proposed which uses the classical finite-difference discretization on a Bakhvalov-type mesh. Second-order accuracy, uniform with respect to the perturbation parameter, is proved in the maximum norm. Numerical results are presented in support of the theoretical ones. © 2009 Springer Science+Business Media, LLC.
| Funding sponsor | Funding number | Acronym |
|---|---|---|
| Ministarstvo Prosvete, Nauke i Tehnološkog Razvoja | 144006 | MPNTR |
The second author’s work was supported by the Ministry of Science and Technological Development of the Republic of Serbia under grant 144006.
Teofanov, L.; Department for Fundamental Disciplines, Faculty of Technical Sciences, University of Novi Sad, Trg D. Obradovića 6, Serbia;
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